Dr. Jianguo Wen [Argonne National Laboratory, USA]

Title: Aberration-Corrected Scanning/Transmission Electron Microscopy for Advanced Materials

Time: 10:00 - 11:00 AM, Monday, September 12, 2016

Place: Auditorium Room 410, HPSTAR (Shanghai)

Host: Dr. Wenge Yang

Abstract:

The advent of spherical aberration (Cs) correction has led to significant improvements in high-resolution scanning/transmission electron microscopy. Recent development of correction of chromatic aberration (Cc) offers a new opportunity to improve imaging capability further, allowing us to achieve amplitude contrast imaging (ACI) in high-resolution transmission electron microscopy. With these newly developed techniques, I will show some examples using aberration-corrected S/TEM for characterizing advanced materials such as catalysts, battery materials, ferroelectric films etc. Another example will be carbon materials such as graphene, and nanotubes, and high-pressure synthesized diamond.

Biography of the Speaker:

Education

Ph. D. Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, China

M. S. Metal Physics, Wuhan University, China

B. S. Physics, Wuhan University, China

Research Experience

Argonne National Laboratory - Center for Nanoscale Materials (CNM)    2011-present

Materials Scientist

University of Illinois at Urbana-Champaign - Frederick Seitz Materials Research Laboratory 2002-2011

Scientist

Boston College – Physics Department       2000-2002

Research assistant professor

International Superconductivity Technology Center, Tokyo, Japan    1993-2000

Senior Scientist

Delft University of Technology – Materials Science and Engineering, The Netherlands 1991-1993

Post-doc

Publications (275 in total)

23 papers were cited over 100 times

Highest citation number is 800

3 Book Chapters

20 patents